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Dependence of Electrical Properties of InAlN/GaN and InAlN/AlGaN/GaN Heterostructures FETs on the AlN Interlayer Thickness.

Masanobu HirokiNarihiko MaedaNaoteru Shigekawa
Published in: IEICE Trans. Electron. (2010)
Keyphrases
  • electrical properties
  • structuring elements
  • film thickness
  • inter layer
  • gray scale
  • image processing
  • motion estimation
  • single layer