A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology.
Hsien-Chin ChiuChia-Shih ChengHsuan-Ling KaoJeffrey S. FuQiang CuiJuin J. LiouPublished in: Microelectron. Reliab. (2011)
Keyphrases
- cmos technology
- field effect transistors
- nm technology
- high density
- high sensitivity
- high speed
- low power
- high noise
- waveguide
- low cost
- power consumption
- signal to noise ratio
- ultra wide band
- metal oxide semiconductor
- low signal to noise ratio
- low voltage
- power dissipation
- image processing
- noise level
- image enhancement
- ultra wideband
- frequency band
- wireless sensor networks