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Epitaxial Strain Control of HfxZr1-xO2 with Sub-nm IGZO Seed Layer Achieving EOT=0.44 nm for DRAM Cell Capacitor.

Seongho KimYoung-Keun ParkGyu Soup LeeEui Joong ShinWoon-San KoHi Deok LeeGa-Won LeeByung Jin Cho
Published in: VLSI Technology and Circuits (2023)
Keyphrases
  • metal oxide
  • dynamic random access memory
  • control system
  • data sets
  • control method
  • multi layer
  • cmos technology
  • real time
  • data management
  • main memory
  • robotic systems
  • optimal control
  • high density
  • thin film
  • control loop