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High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer.
Yue Li
Ruiyuan Yin
Ming Tao
Yilong Hao
Cheng P. Wen
Maojun Wang
Jie Zhang
Xuelin Yang
Bo Shen
Published in:
ICICDT (2019)
Keyphrases
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schottky barrier
field effect transistors
semiconductor devices
high density
low density
steady state
magnetic recording
mathematical analysis
multi layer
silicon dioxide
cost effective
reinforcement learning
image analysis
high speed
bit rate
application layer