A 0.13μm 64Mb HfOx ReRAM using configurable ramped voltage write and low read-disturb sensing techniques for reliability improvement.
Xiaowei HanQian JiaHongbin SunLongfei WangHuaqiang WuYimao CaiFeng ZhangYongyi XieFangxu DongXiaoguang WangXiaofei XueLi PangXiaoqing ZhaoMengnan WuPu BaiQi LiuHangbing LvBing YuChao ZhaoHe QianRu HuangMing LiuYumei ZhouNanning ZhengQiwei RenPublished in: CICC (2017)