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Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor.
Mahsa Tahermaram
Mahdi Vadizadeh
A. Eslamzadeh
Morteza Fathipour
Published in:
EIT (2009)
Keyphrases
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nano scale
silicon dioxide
leakage current
high speed
information systems
image processing
multiscale
evolutionary algorithm
database
data sets
neural network
data mining
three dimensional
electrical properties