13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Yen-Huei ChenWei-Min ChanWei-Cheng WuHung-Jen LiaoKuo-Hua PanJhon-Jhy LiawTang-Hsuan ChungQuincy LiGeorge H. ChangChih-Yung LinMu-Chi ChiangShien-Yang WuSreedhar NatarajanJonathan ChangPublished in: ISSCC (2014)
Keyphrases
- cmos technology
- nm technology
- power consumption
- low power
- leakage current
- high levels
- parallel processing
- field effect transistors
- metal oxide semiconductor
- low voltage
- significantly lower
- high correlation
- metal oxide
- wide range
- silicon on insulator
- image sensor
- power dissipation
- low cost
- highly correlated
- key technologies
- rapid development
- high speed
- high rate
- times faster
- cost effective
- mathematical analysis
- small size
- high noise
- x ray
- computer systems