Studying the Viability of Static Complementary Metal-Oxide-Semiconductor Gates with a Large Number of Inputs When Using Separate Transistor Wells.
David Guerrero MartosAlejandro MillánJorge JuanManuel J. BellidoPaulino Ruiz-de-ClavijoEnrique OstúaJulian ViejoPublished in: J. Low Power Electron. (2011)