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high density and aging resilient 8T SRAM with 14nm FinFET technology featuring 560mV VMIN with read and write assist.
Kyung-Hoae Koo
Liqiong Wei
John Keane
Uddalak Bhattacharya
Eric A. Karl
Kevin Zhang
Published in:
VLSIC (2015)
Keyphrases
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high density
low density
magnetic recording
cmos technology
high power
close proximity
thin film
high bandwidth
data center
read write
data transmission
cost effective
case study
computer simulation
field effect transistors
nm technology
write operations
ibm zenterprise
power consumption
cloud computing