cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs.
Heinz HoenigschmidAlexander FreyJohn K. DeBrosseToshiaki KirihataGerhard MuellerDaniel W. StoraskaGabriel DanielGerd FrankowskyKevin P. GuayDavid R. HansonLouis Lu-Chen HsuBrian JiDmitry G. NetisSteve PanaroniCarl RadensArmin M. ReithHartmud TerletzkiOliver WeinfurtnerJohann AlsmeierWerner WeberMatthew R. WordemanPublished in: IEEE J. Solid State Circuits (2000)