A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching.
Patrick WaltereitMarina PreschleStefan MullerLutz KirsteHeiko CzapJoachim RusterMichael DammannRichard ReinerPublished in: DRC (2018)
Keyphrases
- integrated circuit
- structuring elements
- high speed
- cost effective
- case study
- rapid development
- gray scale
- personal computer
- metal oxide
- technological advances
- key technologies
- low power
- mathematical morphology
- data processing
- low cost
- st century
- multimedia
- computer vision
- metal oxide semiconductor
- artificial intelligence