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A comparative study on device degradation under a positive gate stress and hot carrier stress in InGaZnO thin film transistors.

Hyun Jun JangSeung Min LeeChong-Gun YuJong-Tae Park
Published in: Microelectron. Reliab. (2013)
Keyphrases
  • thin film
  • high density
  • field effect transistors
  • short circuit
  • multi layer
  • supervised learning
  • integrated circuit
  • cmos technology
  • white light interferometry