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2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications.

Marcella CarissimiRitesh MukherjeeVivek TyagiFabio DisegniDavide ManfrèCesare TortiDaniele GallinariSandro RossiAndrea GamberoDonatella BrambillaPaola ZulianiRiccardo ZurlaAlessandro CabriniGuido TorelliMarco PasottiChantal AuricchioEmanuela CalvettiLaura CapecchiLuigi CroceStefano ZanchiVikas RanaPreeti Mishra
Published in: ESSCIRC (2019)
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