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Notched gate MOSFET for capacitance reduction in RF SOI technology.

Lucas Antunes TambaraPascal MassonJulien AmourouxStéphane MonfrayJulien DuraFrederic GianeselloJulien BabicRomain DebrouckeLoic WelterSiddhartha DharBernadette GrosClement CharbuilletFranck JulienGuillaume BertrandArnaud RégnierAlain Fleury
Published in: DTTIS (2023)
Keyphrases
  • rapid development
  • high speed
  • data processing
  • relevance feedback
  • cmos technology
  • low power
  • key technologies
  • ultra wide band
  • silicon on insulator
  • case study
  • high frequency
  • personal computer