A 1-V, 10-MHz, 3.5-mW, 1-Mb MTCMOS SRAM: with charge-recycling input/output buffers.
Nobutaro ShibataHiroki MorimuraMayumi WatanabePublished in: IEEE J. Solid State Circuits (1999)
Keyphrases
- input output
- power consumption
- cmos technology
- low power
- high speed
- noise cancellation
- fuzzy model
- internal states
- power dissipation
- fuzzy neural network
- ibm zenterprise
- data center
- data envelopment analysis
- low voltage
- nonlinear functions
- fuzzy modeling
- high frequency
- power supply
- cost effective
- single phase
- image restoration
- real time