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Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors.

Fengkai LiuLei WuKai WangEnhao GuanXingji Li
Published in: IRPS (2023)
Keyphrases
  • silicon dioxide
  • space charge
  • ionizing radiation
  • high density
  • field effect transistors
  • electric field
  • power consumption
  • leakage current
  • multiscale
  • computer assisted