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Effect of Precursor Defects in Oxide Layer on Ionizing Radiation Damage of Bipolar Junction Transistors.
Fengkai Liu
Lei Wu
Kai Wang
Enhao Guan
Xingji Li
Published in:
IRPS (2023)
Keyphrases
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silicon dioxide
space charge
ionizing radiation
high density
field effect transistors
electric field
power consumption
leakage current
multiscale
computer assisted