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Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits.

Ming-Long FanShao-Yu YangVita Pi-Ho HuYin-Nien ChenPin SuChing-Te Chuang
Published in: Microelectron. Reliab. (2014)
Keyphrases
  • logic circuits
  • low power
  • power consumption
  • high speed
  • case study
  • signal processing
  • functional decomposition
  • tunnel diode