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Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits.
Ming-Long Fan
Shao-Yu Yang
Vita Pi-Ho Hu
Yin-Nien Chen
Pin Su
Ching-Te Chuang
Published in:
Microelectron. Reliab. (2014)
Keyphrases
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logic circuits
low power
power consumption
high speed
case study
signal processing
functional decomposition
tunnel diode