Hysteresis-free MOSCAP made with Al2O3/(010)β-Ga2O3 interface using a combination of surface cleaning, etching and post-deposition annealing.
A. E. IslamKevin D. LeedyNeil A. MoserS. GanguliKyle J. LiddyAndrew J. GreenKelson D. ChabakPublished in: DRC (2021)
Keyphrases
- thin film
- simulated annealing
- genetic algorithm ga
- genetic algorithm
- plasma etching
- user interface
- film thickness
- three dimensional
- fitness function
- surface features
- neural network
- hybrid algorithm
- multi view
- multi objective
- low density
- user friendly
- range data
- surface reconstruction
- metaheuristic
- genetic programming
- hybrid particle swarm optimization
- magnetic recording
- objective function
- viewpoint