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A novel high-voltage trench gate insulated gate bipolar transistor with diffusion remnant layer.
Bin Zhang
Yan Han
Shifeng Zhang
Dazhong Zhu
Wei Zhang
Huanting Wu
Fang Liu
Published in:
IEICE Electron. Express (2013)
Keyphrases
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field effect transistors
high voltage
steady state
silicon dioxide
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operating conditions
mathematical analysis
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