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A 6T-SRAM in 28nm FDSOI technology with Vmin of 0.52V using assisted read and write operation.
Ashish Kumar
Vinay Kumar
Dhori Kedar Janardan
G. S. Visweswaran
Kaushik Saha
Published in:
ICICDT (2015)
Keyphrases
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cmos technology
write operations
case study
rapid development
read write
power consumption
nm technology
cost effective
neural network
computer systems
low power
data transmission
disk drives
dynamic random access memory
database
metal oxide semiconductor
data sets