Login / Signup
Low-leakage sub-threshold 9 T-SRAM cell in 14-nm FinFET technology.
Behzad Zeinali
Jens Kargaard Madsen
Praveen Raghavan
Farshad Moradi
Published in:
Int. J. Circuit Theory Appl. (2017)
Keyphrases
</>
cmos technology
leakage current
case study
low power
key technologies
data processing
computer systems
nm technology
data sets
information systems
image analysis
cost effective
power consumption
parallel processing
high levels
silicon on insulator