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Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device.
A. Srivastava
R. K. Nahar
Chandan Kumar Sarkar
W. P. Singh
Y. Malhotra
Published in:
Microelectron. Reliab. (2011)
Keyphrases
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electrical properties
film thickness
silicon nitride
neural network
statistical analysis
experimental study
electron microscopy
thin film