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Study of hafnium oxide deposited using Dense Plasma Focus machine for film structure and electrical properties as a MOS device.

A. SrivastavaR. K. NaharChandan Kumar SarkarW. P. SinghY. Malhotra
Published in: Microelectron. Reliab. (2011)
Keyphrases
  • electrical properties
  • film thickness
  • silicon nitride
  • neural network
  • statistical analysis
  • experimental study
  • electron microscopy
  • thin film