12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
Jonathan ChangYen-Huei ChenWei-Min ChanSahil Preet SinghHank ChengHidehiro FujiwaraJih-Yu LinKao-Cheng LinJohn HungRobin LeeHung-Jen LiaoJhon-Jhy LiawQuincy LiChih-Yung LinMu-Chi ChiangShien-Yang WuPublished in: ISSCC (2017)
Keyphrases
- cmos technology
- nm technology
- low power
- power consumption
- leakage current
- low voltage
- high levels
- significantly lower
- parallel processing
- rapid development
- case study
- high correlation
- silicon on insulator
- wide range
- high sensitivity
- metal oxide semiconductor
- high speed
- image sensor
- highly correlated
- power dissipation
- times faster
- field effect transistors
- embedded dram
- metal oxide
- digital signal processing
- cost effective
- data processing