A 32nm tunnel FET SRAM for ultra low leakage.

Adam Makosiej Rutwick Kumar Kashyap Andrei Vladimirescu Amara Amara Costin Anghel

Published in: ISCAS (2012)

Keyphrases

leakage current
high speed
low power
low voltage
power consumption
data structure
data transmission
high levels
electrical properties
nm technology
database
data acquisition
metal oxide