A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance.
Takashi SatoToshiki KanamotoSaiko KobayashiNobuhiko GotoTakao SatoHitoshi SugiharaHiroo MasudaPublished in: IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (2010)