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On Device Modeling for Circuit Simulation With Application to Carbon-Nanotube and Graphene Nano-Ribbon Field-Effect Transistors.
Ibrahim N. Hajj
Published in:
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. (2015)
Keyphrases
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field effect transistors
semiconductor devices
mathematical analysis
high density
schottky barrier
high speed
real time
chip design
modeling method