Solid-state non-volatile memories based on vdW heterostructure-based vertical-transport ferroelectric field-effect transistors.
Qiyu YangZheng-Dong LuoFei XiaoJunpeng ZhangDawei ZhangDongxin TanXuetao GanYan LiuZhufei ChuYinshui XiaGenquan HanPublished in: Sci. China Inf. Sci. (2024)
Keyphrases
- solid state
- flash memory
- field effect transistors
- schottky barrier
- file system
- main memory
- steady state
- random access
- disk drives
- data storage
- high density
- semiconductor devices
- embedded systems
- mathematical analysis
- metal oxide
- data management
- storage systems
- database systems
- digital images
- small size
- database management systems
- markov chain
- low cost
- wireless sensor networks