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Effect of the optical power and active layer thickness on the photocurrent in metal-semiconductor-metal detectors.

Nacer Amara DebbarAhmed A. TelbaMajeed Alkanhal
Published in: ICECS (2003)
Keyphrases
  • grain size
  • field effect transistors
  • object detection
  • light scattering
  • power consumption
  • multi layer
  • data sets
  • three dimensional
  • spatial distribution
  • metal oxide
  • low cost
  • steady state
  • high temperature