Z.-F. Lou

Publication Activity (10 Years)

Years Active: 2022-2023
Publications (10 Years): 4

Top Topics

Simulated Annealing

Quantum Computing

Top Venues

VLSI Technology and Circuits

Publications

K.-Y. Hsiang, J.-Y. Lee, F.-S. Chang, Z.-F. Lou, Z.-X. Li, Z.-H. Li, J.-H. Chen, C. W. Liu, T.-H. Hou, Min-Hung Lee
FeRAM Recovery up to 200 Periods with Accumulated Endurance 1012 Cycles and an Applicable Array Circuit toward Unlimited eNVM Operations. VLSI Technology and Circuits (2023)
K.-Y. Hsiang, J.-Y. Lee, Z.-F. Lou, F.-S. Chang, Z.-X. Li, C. W. Liu, T.-H. Hou, P. Su, M. H. Lee
Cryogenic Endurance of Anti-ferroelectric and Ferroelectric $\text{Hf}_{1-\mathrm{x}}\text{Zr}_{\mathrm{X}}\mathrm{O}_{2}$ for Quantum Computing Applications. IRPS (2023)
K.-Y. Hsiang, C.-Y. Liao, Y.-Y. Lin, Z.-F. Lou, C.-Y. Lin, J.-Y. Lee, F.-S. Chang, Z.-X. Li, H.-C. Tseng, C.-C. Wang, W.-C. Ray, T.-H. Hou, T.-C. Chen, C.-S. Chang, M. H. Lee
cycling) of Ferroelectric and Anti-Ferroelectric HfZrO2. IRPS (2022)
C.-Y. Liao, K.-Y. Hsiang, Z.-F. Lou, H.-C. Tseng, C.-Y. Lin, Z.-X. Li, F.-C. Hsieh, C. C. Wang, F.-S. Chang, W.-C. Ray, Y.-Y. Tseng, Shu-Tong Chang, T. C. Chen, M. H. Lee
Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM. VLSI Technology and Circuits (2022)