Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM.
C.-Y. LiaoK.-Y. HsiangZ.-F. LouH.-C. TsengC.-Y. LinZ.-X. LiF.-C. HsiehC. C. WangF.-S. ChangW.-C. RayY.-Y. TsengShu-Tong ChangT. C. ChenM. H. LeePublished in: VLSI Technology and Circuits (2022)