Ken Nakahara

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 10

Top Topics

Power Electronics

Structural Properties

Top Venues

IEEE Trans. Ind. Electron.

IEEE Trans. Circuits Syst. II Express Briefs

Publications

Tatsuya Yanagi, Ken Nakahara, Hayato Sumiya, Sakahisa Nagai, Osamu Shimizu, Hiroshi Fujimoto
Effect of the Conduction Resistance of SiC MOSFET on the Harmonics of Inverter Voltage in Wireless Power-Transfer Systems for Electric Vehicles. IEEE Access 12 (2024)
Masayoshi Yamamoto, Shinya Shirai, Senanayake Thilak, Jun Imaoka, Ryosuke Ishido, Yuta Okawauchi, Ken Nakahara
An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications. IEICE Trans. Fundam. Electron. Commun. Comput. Sci. (5) (2022)
Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara
Geometry Independent Hole Injection Current Model of GaN Ridge HEMTs. ISIE (2021)
Yohei Nakamura, Naotaka Kuroda, Atsushi Yamaguchi, Ken Nakahara, Michihiro Shintani, Takashi Sato
Influence of Device Parameter Variability on Current Sharing of Parallel-Connected SiC MOSFETs. ATS (2020)
Taketoshi Tanaka, Norikazu Ito, Shinya Takado, Masaaki Kuzuhara, Ken Nakahara
Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si. IEICE Trans. Electron. (4) (2020)
Junichi Kashiwagi, Hiroyuki Sakairi, Hirotaka Otake, Yusuke Nakakohara, Ken Nakahara
Magnetic Near-Field Strength Prediction of a Power Module by Measurement-Independent Modeling of Its Structure. IEEE Access 8 (2020)
Hitoshi Aoki, Hiroyuki Sakairi, Naotaka Kuroda, Kentaro Chikamatsu, Ken Nakahara
Switching Time Characterization and Modeling of AlN/GaN MIS-HEMTs. ICIT (2019)
Junichi Kashiwagi, Atsushi Yamaguchi, Yohei Moriyama, Ken Nakahara
Hysteretic Control Embedded Boost Converter Operating at 25-MHz Switching. IEEE Trans. Circuits Syst. II Express Briefs (1) (2019)
Tatsuya Miyazaki, Hirotaka Otake, Yusuke Nakakohara, Mamoru Tsuruya, Ken Nakahara
A Fanless Operating Trans-Linked Interleaved 5 kW Inverter Using SiC MOSFETs to Achieve 99% Power Conversion Efficiency. IEEE Trans. Ind. Electron. 65 (12) (2018)
Yusuke Nakakohara, Hirotaka Otake, Tristan M. Evans, Tomohiko Yoshida, Mamoru Tsuruya, Ken Nakahara
Three-Phase LLC Series Resonant DC/DC Converter Using SiC MOSFETs to Realize High-Voltage and High-Frequency Operation. IEEE Trans. Ind. Electron. 63 (4) (2016)
Kohei Nagaoka, Kentaro Chikamatsu, Atsushi Yamaguchi, Ken Nakahara, Takashi Hikihara
High-speed gate drive circuit for SiC MOSFET by GaN HEMT. IEICE Electron. Express 12 (11) (2015)