Katsuyoshi Washio

Publication Activity (10 Years)

Years Active: 1999-2012
Publications (10 Years): 0

Top Venues

IEEE J. Solid State Circuits

Publications

Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, Hiroshi Kondoh
A Push-Push VCO With 13.9-GHz Wide Tuning Range Using Loop-Ground Transmission Line for Full-Band 60-GHz Transceiver. IEEE J. Solid State Circuits 47 (6) (2012)
Nobuhiro Shiramizu, Akihiro Nakamura, Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio
Low-power fully-integrated K-band transceiver using transformer direct-stacking/connecting and balun signal-combining techniques. ESSCIRC (2010)
Takahiro Nakamura, Toru Masuda, Nobuhiro Shiramizu, Akihiro Nakamura, Katsuyoshi Washio
A 20-GHz 1-V VCO with dual-transformer configuration and a pseudo-static divider on self-stabilized concept. ESSCIRC (2009)
Takahiro Nakamura, Toru Masuda, Katsuyoshi Washio, Hiroshi Kondoh
A 59GHz push-push VCO with 13.9GHz tuning range using loop-ground transmission line for a full-band 60GHz transceiver. ISSCC (2009)
Nobuhiro Shiramizu, Toru Masuda, Takahiro Nakamura, Katsuyoshi Washio
24-GHz 1-V pseudo-stacked mixer with gain-boosting technique. ESSCIRC (2008)
Masao Kondo, Isao Miyashita, Tadashi Kuramaoto, Makoto Koshimizu, Katsuyoshi Washio
Low ACPR Characteristics for WCDMA Applications of SiGe: C HBT Devices with Small Emitter Capacitance. IEICE Trans. Electron. (4) (2006)
Toru Masuda, Kenichi Ohhata, Nobuhiro Shiramizu, Eiji Ohue, Katsuya Oda, Reiko Hayami, Hiromi Shimamoto, Masao Kondo, Takashi Harada, Katsuyoshi Washio
SiGe-HBT-based 54-gb/s 4: 1 multiplexer IC with full-rate clock for serial communication systems. IEEE J. Solid State Circuits 40 (3) (2005)
Kenichi Ohhata, Toru Masuda, Kazuo Imai, Ryoji Takeyari, Katsuyoshi Washio
A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links. IEEE J. Solid State Circuits 34 (1) (1999)
Kenichi Ohhata, Toru Masuda, Eiji Ohue, Katsuyoshi Washio
Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGe HBT. IEEE J. Solid State Circuits 34 (9) (1999)