Hsu-Ming Hsiao

Publication Activity (10 Years)

Years Active: 2022-2024
Publications (10 Years): 4

Top Topics

Fast Fourier Transform

Sparse Matrices

Random Access Memory

Top Venues

IEEE J. Solid State Circuits

Publications

Ping-Chun Wu, Jian-Wei Su, Yen-Lin Chung, Li-Yang Hong, Jin-Sheng Ren, Fu-Chun Chang, Yuan Wu, Ho-Yu Chen, Chen-Hsun Lin, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Shih-Chieh Chang, Wei-Chung Lo, Chih-I Wu, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang
An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental Accumulation for AI Edge Chips. IEEE J. Solid State Circuits 59 (7) (2024)
Ping-Chun Wu, Jian-Wei Su, Li-Yang Hong, Jin-Sheng Ren, Chih-Han Chien, Ho-Yu Chen, Chao-En Ke, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang
A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips. IEEE J. Solid State Circuits 59 (1) (2024)
Ping-Chun Wu, Jian-Wei Su, Li-Yang Hong, Jin-Sheng Ren, Chih-Han Chien, Ho-Yu Chen, Chao-En Ke, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Wei-Chung Lo, Shih-Chieh Chang, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Meng-Fan Chang
A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices. ISSCC (2023)
Ping-Chun Wu, Jian-Wei Su, Yen-Lin Chung, Li-Yang Hong, Jin-Sheng Ren, Fu-Chun Chang, Yuan Wu, Ho-Yu Chen, Chen-Hsun Lin, Hsu-Ming Hsiao, Sih-Han Li, Shyh-Shyuan Sheu, Shih-Chieh Chang, Wei-Chung Lo, Chung-Chuan Lo, Ren-Shuo Liu, Chih-Cheng Hsieh, Kea-Tiong Tang, Chih-I Wu, Meng-Fan Chang
A 28nm 1Mb Time-Domain Computing-in-Memory 6T-SRAM Macro with a 6.6ns Latency, 1241GOPS and 37.01TOPS/W for 8b-MAC Operations for Edge-AI Devices. ISSCC (2022)