Daniel Fainstein

Publication Activity (10 Years)

Years Active: 2012-2013
Publications (10 Years): 0

Top Topics

Dynamic Random Access Memory

Metal Oxide Semiconductor

Low Power Consumption

Top Venues

IEEE J. Solid State Circuits

Publications

Sami Rosenblatt, Daniel Fainstein, Alberto Cestero, John Safran, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer
Field Tolerant Dynamic Intrinsic Chip ID Using 32 nm High-K/Metal Gate SOI Embedded DRAM. IEEE J. Solid State Circuits 48 (4) (2013)
Daniel Fainstein, Sami Rosenblatt, Alberto Cestero, Norman Robson, Toshiaki Kirihata, Subramanian S. Iyer
Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM. VLSIC (2012)