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Dynamic intrinsic chip ID using 32nm high-K/metal gate SOI embedded DRAM.
Daniel Fainstein
Sami Rosenblatt
Alberto Cestero
Norman Robson
Toshiaki Kirihata
Subramanian S. Iyer
Published in:
VLSIC (2012)
Keyphrases
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cmos technology
silicon on insulator
metal oxide semiconductor
dynamic random access memory
embedded dram
low power
low cost
low voltage
power consumption
parallel processing
integrated circuit
random access memory
power dissipation
nm technology
low power consumption
high speed
real time