Daniel Christopher Worledge

Publication Activity (10 Years)

Years Active: 2006-2022
Publications (10 Years): 2

Top Topics

External Forces

Design Considerations

Top Venues

VLSI Technology and Circuits

Publications

C. Safranski, Guohan Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, Eileen A. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, Kenneth F. Latzko, Philip Louis Trouilloud, S. Zare, Daniel Christopher Worledge
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions. VLSI Technology and Circuits (2022)
Guohan Hu, J. J. Nowak, G. Lauer, J. H. Lee, J. Z. Sun, J. Harms, A. Annunziata, S. Brown, W. Chen, Y. H. Kim, N. Marchack, S. Murthy, Chandrasekharan Kothandaraman, Eugene J. O'Sullivan, J. H. Park, M. Reuter, R. P. Robertazzi, Philip Louis Trouilloud, Y. Zhu, Daniel Christopher Worledge
Low-current Spin Transfer Torque MRAM. VLSI-DAT (2017)
Daniel Christopher Worledge
Single-domain model for toggle MRAM. IBM J. Res. Dev. 50 (1) (2006)
Michael C. Gaidis, Eugene J. O'Sullivan, Janusz Jozef Nowak, Yu Lu, Sivananda K. Kanakasabapathy, Philip Louis Trouilloud, Daniel Christopher Worledge, Solomon Assefa, Keith R. Milkove, George P. Wright, William J. Gallagher
Two-level BEOL processing for rapid iteration in MRAM development. IBM J. Res. Dev. 50 (1) (2006)
David William Abraham, Philip Louis Trouilloud, Daniel Christopher Worledge
Rapid-turnaround characterization methods for MRAM development. IBM J. Res. Dev. 50 (1) (2006)