Login / Signup
Guohan Hu
Publication Activity (10 Years)
Years Active: 2017-2022
Publications (10 Years): 2
Top Topics
External Forces
Design Considerations
Line Segments
Read Write
Top Venues
VLSI Technology and Circuits
VLSI-DAT
</>
Publications
</>
C. Safranski
,
Guohan Hu
,
J. Z. Sun
,
P. Hashemi
,
S. L. Brown
,
L. Buzi
,
C. P. D'Emic
,
E. R. J. Edwards
,
Eileen A. Galligan
,
M. G. Gottwald
,
O. Gunawan
,
S. Karimeddiny
,
H. Jung
,
J. Kim
,
Kenneth F. Latzko
,
Philip Louis Trouilloud
,
S. Zare
,
Daniel Christopher Worledge
Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.
VLSI Technology and Circuits
(2022)
Guohan Hu
,
J. J. Nowak
,
G. Lauer
,
J. H. Lee
,
J. Z. Sun
,
J. Harms
,
A. Annunziata
,
S. Brown
,
W. Chen
,
Y. H. Kim
,
N. Marchack
,
S. Murthy
,
Chandrasekharan Kothandaraman
,
Eugene J. O'Sullivan
,
J. H. Park
,
M. Reuter
,
R. P. Robertazzi
,
Philip Louis Trouilloud
,
Y. Zhu
,
Daniel Christopher Worledge
Low-current Spin Transfer Torque MRAM.
VLSI-DAT
(2017)