Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions.

C. Safranski Guohan Hu J. Z. Sun P. Hashemi S. L. Brown L. Buzi C. P. D'Emic E. R. J. Edwards Eileen A. Galligan M. G. Gottwald O. Gunawan S. Karimeddiny H. Jung J. Kim Kenneth F. Latzko Philip Louis Trouilloud S. Zare Daniel Christopher Worledge

Published in: VLSI Technology and Circuits (2022)

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