Amr M. S. Tosson

Publication Activity (10 Years)

Years Active: 2013-2022
Publications (10 Years): 8

Top Topics

Mahalanobis Distance

Memory Capacity

Error Resilience

Top Venues

ACM Great Lakes Symposium on VLSI

Publications

Kangqiang Pan, Amr M. S. Tosson, Ningxuan Wang, Norman Y. Zhou, Lan Wei
A Novel 2T2R CR-based TCAM Design for High-speed and Energy-efficient Applications. ACM Great Lakes Symposium on VLSI (2022)
Kangqiang Pan, Amr M. S. Tosson, Norman Y. Zhou, Lan Wei
A Novel Programmable Variation-Tolerant RRAM-based Delay Element Circuit. NANOARCH (2021)
An Qi Zhang, Amr M. S. Tosson, Lan Wei
Error Resilience and Recovery of Process Induced Stuck-at Faults in MLP Neural Networks using Emerging Technology. NANOARCH (2021)
Amr M. S. Tosson, Shimeng Yu, Mohab H. Anis, Lan Wei
A Study of the Effect of RRAM Reliability Soft Errors on the Performance of RRAM-Based Neuromorphic Systems. IEEE Trans. Very Large Scale Integr. Syst. 25 (11) (2017)
Amr M. S. Tosson, Shimeng Yu, Mohab H. Anis, Lan Wei
1T2R: A novel memory cell design to resolve single-event upset in RRAM arrays. ASICON (2017)
Amr M. S. Tosson, Shimeng Yu, Mohab H. Anis, Lan Wei
Analysis of RRAM Reliability Soft-Errors on the Performance of RRAM-Based Neuromorphic Systems. ISVLSI (2017)
Amr M. S. Tosson, Shimeng Yu, Mohab H. Anis, Lan Wei
Mitigating the Effect of Reliability Soft-errors of RRAM Devices on the Performance of RRAM-based Neuromorphic Systems. ACM Great Lakes Symposium on VLSI (2017)
Amr M. S. Tosson, Mohab H. Anis, Lan Wei
/Hf 1T1R RRAM Memory Cell. ACM Great Lakes Symposium on VLSI (2016)
Amr M. S. Tosson, Siddharth Garg, Mohab H. Anis
Tagged probabilistic simulation based error probability estimation for better-than-worst case circuit design. VLSI-SoC (2013)