A. F. Tasch Jr.

Publication Activity (10 Years)

Years Active: 1979-1998
Publications (10 Years): 0

Publications

Wei-Kai Shih, Srinivas Jallepalli, C.-F. Yeap, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.
A Monte Carlo Study of Electron Transport in Silicon nMOSFET Inversion Layers. VLSI Design 1998 (1) (1998)
Wei-Kai Shih, Srinivas Jallepalli, Mahbub Rashed, Christine M. Maziar, A. F. Tasch Jr.
Study of Electron Velocity Overshoot in NMOS Inversion Layers. VLSI Design 1998 (1) (1998)
Haihong Wang, Wei-Kai Shih, Susan Green, Scott Hareland, Christine M. Maziar, A. F. Tasch Jr.
-Channel MOSFET's with a Computationally Efficient Inversion Layer Quantization Model. VLSI Design 1998 (1) (1998)
C. Patrick Yue, Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.
Improved universal MOSFET electron mobility degradation models for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (10) (1993)
Victor Martin Agostinelli Jr., Gregory Munson Yeric, A. F. Tasch Jr.
Universal MOSFET hole mobility degradation models for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 12 (3) (1993)
Gregory Munson Yeric, A. F. Tasch Jr., Sanjay K. Banerjee
A universal MOSFET mobility degradation model for circuit simulation. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9 (10) (1990)
A. F. Tasch Jr., Laureen H. Parker
Memory cell and technology issues for 64- and 256-Mbit one-transistor cell MOSD DRAMs. Proc. IEEE 77 (3) (1989)
Dileep Bhandarkar, J. Brock Barton, A. F. Tasch Jr.
CCD Charge-Coupled Device Memories: A Perspective. Computer 12 (1) (1979)