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A novel two-port 6T CMOS SRAM cell structure for low-voltage VLSI SRAM with single-bit-line simultaneous read-and-write access (SBLSRWA) capability.
Bo-Ting Wang
James B. Kuo
Published in:
ISCAS (2000)
Keyphrases
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random access memory
low voltage
design considerations
read write
power line
power management
cmos technology
leakage current
hard disk
flash memory
power consumption
main memory
low power
random access
memory access
write operations