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High-Efficiency SiGe-BiCMOS $E$ -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage.

Elham RahimiJunlei ZhaoFrancesco SveltoAndrea Mazzanti
Published in: IEEE J. Solid State Circuits (2019)
Keyphrases
  • high efficiency
  • high accuracy
  • real and synthetic datasets
  • reactive power compensation
  • arbitrary shape
  • memory space
  • high power
  • real time
  • database
  • high speed
  • power consumption
  • high density