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Simulation and implementation of a two-mode-operation transconductance regulator with a Gallium Nitride High-Electron-Mobility Transistor.

Kai-Jun PaiChang-Hua Lin
Published in: Int. J. Circuit Theory Appl. (2022)
Keyphrases
  • integrated circuit
  • thin film
  • high speed
  • room temperature
  • wide range
  • cmos technology
  • steady state
  • simulation model
  • electron microscopy
  • electron beam
  • ns simulator