22.2 A 69.5mW 20GS/s 6b time-interleaved ADC with embedded time-to-digital calibration in 32nm CMOS SOI.
V. H.-C. ChenLarry T. PileggiPublished in: ISSCC (2014)
Keyphrases
- silicon on insulator
- dynamic random access memory
- analog to digital converter
- power consumption
- metal oxide semiconductor
- cmos technology
- hd video
- power supply
- low power
- camera calibration
- circuit design
- mixed signal
- low cost
- embedded systems
- nm technology
- high speed
- sigma delta
- cmos image sensor
- ibm power processor
- high definition
- power dissipation
- integrated circuit
- computer vision