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1.2 kV 4H-SiC planar power MOSFETs with a low-K dielectric in central gate.

Dong LiuMingyue LiYangjie OuZhong LanMaosen TangWeibo WangXiarong Hu
Published in: IET Circuits Devices Syst. (2022)
Keyphrases
  • transmission line
  • electrical power
  • low voltage
  • leakage current
  • power consumption
  • reactive power
  • high levels
  • real time
  • silicon dioxide
  • computer vision
  • line drawings
  • power management