Login / Signup
Silicon germanium and silicon bipolar RF circuits for 2.7 V single chip radio transceiver integration.
Jan Sevenhans
Bart Verstraeten
Graham Fletcher
Harry Dietrich
Winfried Rabe
Jean Luc Bacq
J. Varin
J. Dulongpont
Published in:
CICC (1998)
Keyphrases
</>
single chip
low power
high speed
high density
low cost
cmos technology
field effect transistors
image sensor
charge coupled device
radio frequency
power consumption
multiresolution
computer vision
signal strength
liquid crystal
multiscale
embedded processors