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A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor.
Dharmendra Singh Yadav
Dheeraj Sharma
Sukeshni Tirkey
Deepak Soni
Deepak G. Sharma
Shriya Bajpai
Neeraj Sharma
Published in:
iNIS (2017)
Keyphrases
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field effect transistors
high density
steady state
thin film
mathematical analysis
schottky barrier
associative memory
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chip design
comparative study
artificial intelligence
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mixed signal
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case study
real world
tunnel boring machine