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Effects of combined NO and forming gas annealing on interfacial properties and oxide reliability of 4H-SiC MOS structures.

Zhaoyang PengYiyu WangHuajun ShenChengzhan LiJia WuYun BaiKean LiuXinyu Liu
Published in: Microelectron. Reliab. (2016)
Keyphrases
  • field effect transistors
  • simulated annealing
  • objective function
  • structural properties
  • genetic algorithm
  • search engine
  • decision trees
  • artificial neural networks
  • structural features
  • reliability analysis
  • fuel cell