A 20 GHz Band 0.5 W GaAs FET Amplifier for Satellite Communications.
Tsutomu NoguchiYoichi AonoKenzi WatanabeShozaburo KamedaPublished in: IEEE J. Sel. Areas Commun. (1983)
Keyphrases
- frequency band
- dual band
- field effect transistors
- dielectric constant
- remote sensing
- high speed
- high power
- communication systems
- gallium arsenide
- injection lasers
- high density
- dynamic range
- high sensitivity
- chip design
- room temperature
- neural network
- high frequency
- subband
- simulation software
- transfer function
- steady state
- multiple access
- orbit determination
- high resolution