Electrical characteristics of amorphous In-Ga-Zn-O thin-film transistors prepared by radio frequency magnetron sputtering with varying oxygen flows.
Yih-Shing LeeTung-Wei YenCheng-I LinHorng-Chih LinYun YehPublished in: Displays (2014)
Keyphrases
- thin film
- radio frequency
- high density
- short circuit
- film thickness
- genetic algorithm
- solar cell
- multi layer
- white light interferometry
- chemical vapor deposition
- room temperature
- data center
- frequency band
- artificial neural networks
- rfid technology
- power consumption
- equivalent circuit
- x ray
- feature extraction
- neural network